Infineon Sues Innoscience Over Patent Infringement; Seeks Permanent Injunction
Infineon has filed a patent infringement lawsuit against technology company Innoscience of Zhuhai, China and Innoscience
Infineon Sues Innoscience Over Patent Infringement; Seeks Permanent Injunction
Claims to lead the industry with GaN patent portfolio, comprising 350 inventions
Infineon has filed a patent infringement lawsuit against technology company Innoscience of Zhuhai, China and Innoscience America, seeking a permanent injunction.
Filed in the US District Court for the Northern District of California, the lawsuit concerns a US Infineon patent covering core aspects of the company's GaN power semiconductors around reliability and performance.
Infineon alleged that Innoscience infringed its patent by making, using, selling, offering to sell and/or importing to the United States, various items including GaN transistors for numerous applications, within automotive, data centres, solar, motor drives, consumer electronics, and related products used in automotive, industrial, and commercial applications.
Adam White, the president of Infineon’s power and sensor systems division stated, “The production of GaN power transistors requires completely new semiconductor designs and processes. With nearly two decades of GaN experience, Infineon can guarantee the outstanding quality required for the highest performance in the respective end products. We vigorously protect our intellectual property and thus act in the interest of all customers and end users.”